(China (Mainland))
Product Summary
The IKW30N60T is an IGBT in trench and fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.
Parametrics
IKW30N60T absolute maximum ratings: (1)Collector-emitter voltage VCE: 600 V; (2)DC collector current, limited by Tjmax TC = 25℃, IC: 60A, TC = 100℃: 30A; (3)Diode pulsed current, tp limited by Tjmax IFpuls: 90A; (4)Gate-emitter voltage VGE: ±20 V; (5)Short circuit withstand time, VGE = 15V, VCC ≤ 400V, Tj ≤ 150℃; (6)tSC: 5 μs; (7)Power dissipation TC = 25℃ Pt o t: 187 W; (8)Operating junction temperature Tj: -40 to +175℃; (9)Storage temperature Ts tg -55 to +175℃; (10)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.
Features
IKW30N60T features: (1)Trench and Fieldstop technology for 600 V applications offers; (2)very tight parameter distribution; (3)high ruggedness, temperature stable behavior; (4)very high switching speed; (5)low VCE(sat); (6)Positive temperature coefficient in VCE(sat); (7)Low EMI; (8)Low Gate Charge; (9)Very soft, fast recovery anti-parallel EmCon HE diode; (10)Complete product spectrum and PSpice Models.
Diagrams
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 IKW30N60T |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 600V 30A |
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IKW30N60TA |
Infineon Technologies |
IGBT Transistors IGBT TrnchStp w/Soft Fast recovery |
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